smd type ic smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 2SD1101 features low frequency amplifier. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 25 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 5v collector current i c 0.7 a collector peak current ic(peak) 1a collector dissipation p c 150 mw junction temperature t j 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v (br)cbo i c = 10a , i e =0 25 v collector-emitter breakdown voltage v (br)ceo i c =1ma,r be = 20 v emitter-base breakdown voltage v (br)ebo i e = 10a , i c =0 5 v collector cutoff current i cbo v cb = 20v, i e =0 1.0 a dc current gain h fe v ce =1v,i c = 0.15a 85 240 collector-emitter saturation voltage v ce(sat) i c =0.5a,i b = 0.05a 0.5 v base-emitter voltage v be v ce =1v,i c = 0.15a 1.0 v h fe classification marking ab ac hfe 85 170 120 240 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type transistors smd type transistors smd type transistors smd type transistors smd type ic smd type smd type ic smd type smd type ic smd type smd type ic smd type product specification 4008-318-123
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